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IEUVI Resist TWGNovember 1, 2007Sapporo, JapanAlbany EUV METDavid Stark for Matt MalloyInternational SEMATECHAlbany NY

Outline About the EUV Resist Test CenterExposure tool overviewImaging capabilitiesSupport equipmentScheduling exposure time2

SEMATECH EUV Resist Test Center SEMATECH’s Resist Test Center (RTC) is located atAlbany Nanotech on the University at Albany campus inNew York. The EUV microexposure tool is the cornerstone of theRTC and is available for use by all SEMATECH membercompanies and EUV resist suppliers. An Immersionmicroexposure tool and an immersion interference tool arealso available at the RTC.3

EUV MET OverviewSource – Xtreme Technologies XTS 13-35 DPP source 0.5W @ Intermediate Focus (35W in 2π)Optical System – Carl Zeiss SMT AG 0.3NA, 5X Reduction using a Schwarzschild projection lens 600um x 600um field size at wafer with 200um x 600um quality area Standard annular illumination of 0.36 – 0.55 sigma Several illumination conditions possible as shown below:SigmaInnerOuterCenter Diameter0.360.55Large Annular0.360.4Small AnnularDipole0.420.1On-Axis Quadrapole0.410.1Off-Axis (45º) Quadrapole0.430.1(Monopole exposures are also possible with a slight modification)Throughput A typical 11x11 focus exposure matrix takes approximately two hours. The length of time is dependant on the required dose and the current state of thesource and optical system. The use of nonstandard illumination schemes significantly increases the time requiredper wafer (ie. 15 minutes/site for monopole illumination).4

EUV RTC Overview – Wafer, Reticle, ResistWafer– 200mm notched wafers are used at the EUV RTC.– There is no need to supply your own wafers as they are provided for your use.– Imaged wafers are shipped to you upon completion of your experiment orrecycled if they are no longer needed.Reticle– A reticle is provided that contains a wide assortment of test structuresincluding: lines/spaces, contacts, cleavable features, etc.– Customer supplied EUV reticles are welcomed although it will takeapproximately four hours to load and align any reticle.Resists– Require MSDS prior to shipment to RTC– Outgassing requirement: SEMATECH requires that resists outgas less than 6.5E 14 molecules/cm2as measured by quadrapole mass spectrometry (35-200 amu, excluding44 amu)5

EUV MET Imaging Capabilities The EUV MET is currently printing 25nm and larger dense (1:1) line/space and iso features.–2D (horizontal & vertical) and contact printing is currently being optimized and will be available soon. Contrast curve exposures are also possible.Through Focus (50nm Increments)80nm70nmTier I60nm50nmTier I: 50nm ImagingTier II: 35nm ImagingTier III: 35nm Imaging45nmTier II40nm*TIER I includes contrast curves35nm30nmTier III25nm6

Support EquipmentWafer Processing TEL ACT-12 wafer track modified to handle 8” wafers.– Linked to exposure tool via a Brooks Automation air/vacuum loadlock– Resist and BARC hand dispense capabilityMetrology Hitachi S9380 CD SEM Thermawave Optiprobe for film thickness measurements andcharacterization Misc. material characterization equipmentTEL ACT-12 Wafer TrackHitachi S9380 CD-SEM7Thermawave Optiprobe

Scheduling Exposure TimeFor questions regarding the EUVmicroexposure tool or to scheduletool time, please contact:Matt Malloy – EUV Project Engineer Phone: 518-956-7134Email: [email protected] experiment plan spreadsheet below shows theinformation that will be needed as well as thevarious exposure and processing options available.eMET ExperimentPlan8

Hitachi S9380 CD SEM Thermawave Optiprobe for film thickness measurements and characterization Misc. material characterization equipment TEL ACT-12 Wafer Track Hitachi S9380 CD-SEM Thermawave Optiprobe. 8 Scheduling Exposure TimeSc